1/4 1.5v drive nch mosfet RQ6C050UN www.rohm.com c 2014 rohm co., ltd. all rights reserved. 2014.05 - rev. a da t a sheet ? structure ? dimensions silicon n-channel mosfet ? features 1) low on-resistance. 2) space saving, small surf ace mount package (tsmt6). 3) 1.5v drive ? applications switching ? packaging specifications ? inner circuit package code taping basic ordering unit (pieces) marking tr 3000 fd type ? absolute maximum ratings (ta=25c) ? 1 ? 2 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp w p d c tch c tstg limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board source current (body diode) 20 150 55 to + 150 10 5.0 10 1.0 10 1.25 ? thermal resistance parameter c /w rth(ch-a) symbol limits unit c hannel to ambient 100 ? mounted on a ceramic board ? each lead has same dimensions tsmt6 abbreviated symbol : xg (1) drain (2) drain (3) gate (4) source (5) drain (6) drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (6)(1) (5)(2) (4)(3) downloaded from: http:///
2/4 da t a sheet RQ6C050UN www.rohm.com c 2014 rohm co., ltd. all rights reserved. 2014.05 - rev. a ? electrical characteristics (ta=25c) parameter symbol i gss y fs min. typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ?? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed 10 av gs = 10v, v ds =0v v dd 10v, 20 vi d = 1ma, v gs =0v 1 av ds = 20v, v gs =0v 0.3 1.0 v v ds = 10v, i d = 1ma 22 30 i d = 5.0a, v gs = 4.5v 27 38 m m m i d = 5.0a, v gs = 2.5v 32 45 m i d = 2.5a, v gs = 1.8v 40 80 i d = 1.0a, v gs = 1.5v 6.5 sv ds = 10v, i d = 5.0a 900 pf v ds = 10v 190120 pf v gs =0v 15 pf f=1mhz 25 ns 70 ns 100 ns 12 ns 2.5 nc 1.7 nc v gs = 4.5v nc i d = 5.0a v dd 10v i d = 2.5a v gs = 4.5v r l 4 r g =10 r l 2 , r g =10 ? body diode characteristics (source-drain) (ta=25c) v sd 1.2 v i s = 1.0a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions ? pulsed ? downloaded from: http:///
3/4 da t a sheet RQ6C050UN www.rohm.com c 2014 rohm co., ltd. all rights reserved. 2014.05 - rev. a ? electrical characteristics curves drain-source voltage : v ds (v) 10 1000 100 10000 0.01 0.1 1 10 10 0 capacitance : c (pf) fig.1 typical capacitance vs. drain-source voltage ta = 2 5 c f=1mhzv gs =0v ciss coss crss drain current : i d (a) 0.01 1 10 100 1000 0.1 1 1 0 switching time : t (ns) fig.2 switching characteristics ta = 2 5 c v dd =10v v gs =4.5v r g =10 pulsed tf tr td (off) td (on) total gate charge : qg (nc) 0 10 2 4 53 6 61 2 41 0 2 8 14 1 6 gate-source voltage : v gs (v) fig.3 dynamic input characteristi cs ta=25 c v dd =10v i d =5a r g =10 pulsed drain current : i d (a) 0.01 0.1 1 10 1000 100 1 0 static drain-source on-state resistance : r ds (on) (m ) fig.7 static drain-source on-state resistance vs. drain current ( ) v gs =4.5v pulsed ta=125 c ta=75 c ta=25 c ta = 25 c gate-source voltage : v gs (v) 023 1 0 60 4020 456 89 71 0 static drain-source on-state resistance : r ds (on) (m ) fig.5 static drain-source on-state resistance vs . gate-source voltage ta = 2 5 c pulsed i d =5.0a i d =2.5a source-drain voltage : v sd (v) 0.0 0.5 1.0 0.01 10 1 0.1 1 .5 source current : i s (a) fig.6 source current vs. source-drain voltage v gs =0v pulsed ta=125 c ta=75 c ta=25 c ta = 25 c drain current : i d (a) 0.01 0.1 1 10 1000 100 1 0 static drain-source on-state resistance : r ds (on) (m ) fig.7 static drain-source on-state resistance vs. drain current ( ) v gs =4.5v pulsed ta=125 c ta=75 c ta=25 c ta = 25 c drain current : i d (a) 0.01 0.1 1 10 1000 100 1 0 static drain-source on-state resistance : r ds (on) (m ) v gs =2.5v pulsed ta=125 c ta=75 c ta=25 c ta = 25 c fig.8 static drain-source on-state resistance vs. drain current ( ? ) drain current : i d (a) 0.01 0.1 1 10 1000 100 1 0 static drain-source on-state resistance : r ds (on) (m ) v gs =1.8v pulsed ta=125 c ta=75 c ta=25 c ta = 25 c fig.9 static drain-source on-state resistance vs. drain current ( ?? ) downloaded from: http:///
4/4 da t a sheet RQ6C050UN www.rohm.com c 2014 rohm co., ltd. all rights reserved. 2014.05 - rev. a drain current : i d (a) 0.01 0.1 1 10 1000 100 1 0 static drain-source on-state resistance : r ds (on) (m ) v gs =1.5v pulsed ta=125 c ta=75 c ta=25 c ta = 25 c fig.10 static drain-source on-state resistance vs . drain current ( ) drain current : i d (a) 0.01 0.1 1 10 1000 100 1 0 static drain-source on-state resistance : r ds (on) (m ) ta = 2 5 c pulsed v gs =1.5v v gs =1.8v v gs =2.5v v gs =4.5v fig.11 static drain-source on-state resistance vs . drain current ( ) drain current : i d (a) 0.01 0.1 1 0.1 100 10 1 1 0 forward transfer admittance : yfs (s) v ds =10v pulsed fig.12 forward transfer admittanc e vs. drain current ta=125 c ta=75 c ta=25 c ta = 25 c ? measurement circuit fig.13 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.14 switching waveforms 90% 90% 90% 10% 10 % 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) fig.15 gate charge measurement circuit v gs i g(const.) r g v d s d.u.t. i d r l v dd fig.16 gate charge waveform v g v gs charge q g q gs q gd downloaded from: http:///
r1102 a www.rohm.com ? 2014 rohm co., ltd. all rights reserved. notice ro hm cu stome r s upport sy s tem h ttp :// www.r oh m .co m/ co n tact / thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. no tes the information contained herein is subject to change without notice. before you use our products, pl ease contact our sales representative and verify th e la tes t specifica - tion s : alt hou gh rohm is contin uous ly wor ki ng to im pr ove p ro du ct r eli a bility and qualit y, semicon - du c tor s c an bre a k d ow n and ma lf un ct io n du e to var io us f ac to rs. th e re fore, in or der to prevent pe r so nal in ju ry or fi re ar isi ng f ro m fa ilur e, please ta ke sa f ety mea s ur es su ch as com plyin g wi th th e de r at in g ch ara ct er ist ic s, impl e menting redundant and f ir e preve nt ion designs, and u tilizin g ba ck up s a nd f ail - sa fe p ro ce du re s. ro hm shall have no responsibility for any damages arising out of the use of our poducts b ey ond the rating specified by rohm. examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not gr ant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm or any other parties. rohm shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. the products are intended for use in general electronic equipment (i.e. av/oa devices, communi- cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. the products specified in this document are not designed to be radiation tolerant. for use of our products in applications requiring a high degree of reliability (as ex emplified bel ow), please contact and consult with a rohm representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. do not use our products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. rohm shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. rohm has used reasonable care to ensur the accuracy of the information contained in this document. however, rohm does not warrants that such information is error-free, and rohm shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. please use the products in accordance with any applicable environmental laws and regulations, such as the rohs directive. for more details, including rohs compatibility, please contact a rohm sales office. rohm shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. when providing our products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the us export administration regulations and the foreign exchange and foreign trade act. this document, in part or in whole, may not be reprinted or reproduced without prior consent of rohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10)11) 12) 13) 14) downloaded from: http:///
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